au.\*:("CHOONG KI KIM")
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Determination of doping concentration and interface charges for thin film SOI MOSFETsSUNG-KYE PARK; CHOONG-KI KIM.Solid-state electronics. 1993, Vol 36, Num 5, pp 735-740, issn 0038-1101Article
Two-step rapid thermal diffusion of boron into silicon using a boron nitride solid diffusion sourceJEONG-GYOO KIM; CHOONG-KI KIM.Journal of electronic materials. 1989, Vol 18, Num 5, pp 573-577, issn 0361-5235, 5 p.Article
An empirical model for the threshold voltage of enhancement NMOSFET'sHONG-JUNE PARK; CHOONG-KI KIM.IEEE transactions on computer-aided design of integrated circuits and systems. 1985, Vol 4, Num 4, pp 629-635, issn 0278-0070Article
An MOS four-quadrant analog multiplier using simple two-input squaring circuits with source followersHO-JUN SONG; CHOONG-KI KIM.IEEE journal of solid-state circuits. 1990, Vol 25, Num 3, pp 841-848, issn 0018-9200, 8 p.Article
Constant-current contour plot for the description of short-channel effects of MOS transistorsCHOONG-KI KIM; GOODWIN-JOHANSSON, S; DINESH SHARMA et al.I.E.E.E. transactions on electron devices. 1986, Vol 33, Num 10, pp 1619-1621, issn 0018-9383Article
A temperature-stabilized SOI voltage reference based on threshold voltage difference between enhancement and depletion NMOSFET'sHO-JUN SONG; CHOONG-KI KIM.IEEE journal of solid-state circuits. 1993, Vol 28, Num 6, pp 671-677, issn 0018-9200Article
A simple method for obtaining the power distribution yielding a desired temperature distribution in zone-melting recrystallizationBYOUNG-JIN YOON; CHOONG-KI KIM.Japanese journal of applied physics. 1992, Vol 31, Num 10, pp 3414-3419, issn 0021-4922, 1Article
Latch-back-free self-aligned power MOSFET structure with silicided source and body contactYO-HWAN KOH; CHOONG-KI KIM.IEEE electron device letters. 1988, Vol 9, Num 8, pp 408-410, issn 0741-3106Article
Formation of shallow p+-n junctions using boron-nitride solid diffusion sourceKYEONG-TAE KIM; CHOONG-KI KIM.IEEE electron device letters. 1987, Vol 8, Num 12, pp 569-571, issn 0741-3106Article
Two-dimensional analysis of latch-up phenomena in latch-up-free self-aligned IGBT structuresYO-HWAN KOH; CHOONG-KI KIM.Solid-state electronics. 1990, Vol 33, Num 5, pp 497-501, issn 0038-1101, 5 p.Article
CHARGE-COUPLED ANALOG-TO-DIGITAL CONVERTERCHONG MIN KYUNG; CHOONG KI KIM.1981; IEEE J. SOLID-STATE CIRCUITS; ISSN 0018-9200; USA; DA. 1981; VOL. 16; NO 6; PP. 621-626; BIBL. 6 REF.Article
EFFECTS OF HIGH-CURRENT PULSES ON POLYCRYSTALLINE SILICON DIODE WITH N-TYPE REGION HEAVILY DOPED WITH BOTH BORON AND PHOSPHORUSO HYUN KIM; CHOONG KI KIM.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 7; PP. 5359-5360; BIBL. 7 REF.Article
ON THE GEOMETRICAL FACTOR OF LATERAL P-N-P TRANSISTORSKWANG SEOK SEO; CHOONG KI KIM.1980; I.E.E.E. TRANS. ELECTRON DEVICES; USA; DA. 1980; VOL. 27; NO 1; PP. 295-297; BIBL. 8 REF.Article
A REVIEW OF CCD IMAGING TECHNOLOGY.WEN DD; CHOONG KI KIM; AMELIO GF et al.1976; SOLID STATE TECHNOL.; U.S.A.; DA. 1976; VOL. 19; NO 9; PP. 83-86; BIBL. 12 REF.Article
Modeling of edge threshold voltage of mesa-isolated n-channel MOSFETs on fully-depleted thin film SOIJAE-WOO PARK; CHUL-HI HAN; CHOONG-KI KIM et al.Solid-state electronics. 1994, Vol 37, Num 7, pp 1449-1452, issn 0038-1101Article
High performance low temperature polysilicon thin film transistor using ECR plasma thermal oxide as gate insulatorJUNG-YEAL LEE; CHUL-HI HAN; CHOONG-KI KIM et al.IEEE electron device letters. 1994, Vol 15, Num 8, pp 301-303, issn 0741-3106Article
Estimation of effective diffusion time in a rapid thermal diffusion using a solid diffusion sourceBYUNG-JIN CHO; SUNG-KYE PARK; CHOONG-KI KIM et al.I.E.E.E. transactions on electron devices. 1992, Vol 39, Num 1, pp 111-117, issn 0018-9383Article
AES study of rapid thermal boron diffusion into silicon from a solid diffusion source in oxygen ambientJEONG-GYOO KIM; BYUNG-JIN CHO; CHOONG-KI KIM et al.Journal of the Electrochemical Society. 1990, Vol 137, Num 9, pp 2857-2860, issn 0013-4651, 4 p.Article
Amorphous silicon thin-film transistors with two-layer gate insulatorNAM-DEOG KIM; CHOONG-KI KIM; JIN JANG et al.Applied physics letters. 1989, Vol 54, Num 21, pp 2079-2081, issn 0003-6951, 3 p.Article
Zone melting recrystallization of polysilicon by a focused-lamp with unsymmetric trapezoidal power distributionJIN-HO CHOI; HO-JUN SONG; CHOONG-KI KIM et al.Journal of electronic materials. 1991, Vol 20, Num 3, pp 231-235, issn 0361-5235, 5 p.Article
Role of the hole diffusion current on the theory of conduction in ZnO varistorMYUNG-SIK KIM; HYUNG-HWAN OH; CHOONG-KI KIM et al.Japanese journal of applied physics. 1991, Vol 30, Num 11B, pp L1917-L1920, issn 0021-4922, 2Article
The effect of electrochemical reduction and UV exposure in H2S gas on interface properties of ZnS/p-Hg1-xCdxTeJAE-HONG JEONG; HEE-CHUL LEE; CHOONG-KI KIM et al.Japanese journal of applied physics. 1992, Vol 31, Num 12B, pp L1785-L1787, issn 0021-4922, 2Article
GRADED ETCHING OF THERMAL OXIDE WITH VARIOUS ANGLES USING SILICAFILMYEARN IK CHOI; YOUNG SE KWON; CHOONG KI KIM et al.1980; I.E.E.E. ELECTRON DEVICE LETT.; USA; DA. 1980; VOL. 1; NO 3; PP. 30-31; BIBL. 7 REF.Article
A physical model of floating body thin film silicon-on-insulator nMOSFET with parasitic bipolar transistorHYUN-KYU YU; JONG-SON LYU; SANG-WON KANG et al.I.E.E.E. transactions on electron devices. 1994, Vol 41, Num 5, pp 726-733, issn 0018-9383Article
